Physics Virtual Learning - PVL

A quantum experiment that could be done in your/one's controlled Research Lab.
Details are on the attached images below.

:::Lab: "Quantum Dots.":::

Sample: Iron Phosphide.

Step 1: To start a possible reaction, Iron Phosphide is injected into a hot solvent (That is; phosphorus is injected into a heating flask containing iron solution).

Step 2: At any given time during the experiment, when an effect/change/reaction occurs in the solution. The temperature can be stopped, & observations taken/noted. The temperature is raised till the reactions are exhausted & corresponding observations taken/noted.

This same experiment could also be applied/done for different samples listed below ...
Indium Nitrogen Phosphide.
Potassium Sulphides.
Barium Selenide.
Sodium Iodide.
Cadmium Telluride.

:::Lab: "Quantum Anti-Dots.":::

Sample: Gold Arsenide.

Step 1: To start a possible reaction, Gold Arsenide is injected into a very cold solvent (That is; arsenic is injected into a cooling flask containing gold solution).

Step 2: At any given time during the experiment, when an effect/change/reaction occurs in the solution. The temperature can be stopped, & observations taken/noted. The solution is continued to be cooled to certain temperatures till the reactions are exhausted & corresponding observations taken/noted.

This same experiment could also be applied/done for different samples listed below ...
Zinc Selenide.
Silver Antimony.
Cobalt Antimony.
Indium Sulphide.
Indium Arsenic Phosphide.

Written by: Akachi .A.
Profession: Graduate Engineer.
Location: Imo State.

Tags:

::: Rectifier Family :::

Representation of these, are on attached schematics below

Rectifier Family 4:
2 capacitors; 2 diodes pattern.

Rectifier Family 3:
6 diodes; 2 inductors pattern.

Rectifier Family 2:
4 diodes; 1 resistor-divider pattern.

Rectifier Family 1:
2 diodes; 2 series resistors-diodes pattern.

Designed by: Akachi .A.
Profession: Graduate Engineer.
Location: Imo State.

:::A proposed possible Quantum Internet (Q-Internet) Architecture:::

First image represents the block diagram of a proposed possible Quantum Internet (Q-Internet) Architecture.
Second image represents the Q-Internet Guidelines for its hardwares.
The last image represents the two images above.

In details/descriptions are as follows:

1. Microprocessors/Microchips: ZnO or ZnS technology replaces SiC technology for power & bandwidth efficiency.
2. A higher power laser (light source) is used to transmit data adequately.
3. Single mode optics rather than Multiple mode optics. Minimize losses.
4. Fiber-optic cables tapered at the ends. Reduces loss & increase bandwidth/amplitude.
5. Fiber-optic cable wound as coils. To increase photon/signal energy along its path.
6. Fiber-optic cables coated with silver linings, or silver added during manufacturing. To increase power & number of photons,minimize attenuation, & prevent interferences.
7. Curved mirrors used. To make or allow variation of signals/photons; to pump in more photons.
8. For every 1GHz distance of fiber-optic cable, a curved mirror-repeater-mirror is placed. This pattern followed, to minimize cable/signal losses.
9. Repeater is used. To reduce losses, reproduce signals/photons.
10. Enclosure-Boxes used. To avoid vibrations & increase frequency.
11. Colors of paint to be used on optical devices should be red, green, ..., white. To best reflect surrounding lights off the optical devices. Additional light interferences could alter the frequency of the photons/light/signals/data transmitted along the optical paths of the devices.

In summary:

The Transmitter Block reflects the signal/light onto an input curved mirror, which enters a coil of fiber-optic cable, then reflected onto a second curved mirror to enter a repeater (in the case of a quantum field; note this reflection of signals/light by curved mirrors create entangled photons that pumps into the repeater); or an amplifier (in the case of a classical field). From the repeater (in the case of a quantum field; more entangled photons are produced); or from an amplifier (in the case of a classical field), to an output curved mirror which reflects the output into another fiber-optic cable, then into the Receiver's Block.
The Receiver is required to obtain/acquire a system of antenna-repeater-decoder.

Also, refer to the Q-Internet Guidelines on the second attached image for its hardware layout.

Designed & outlined by: Akachi .A.
Profession: Graduate Engineer.
Location: Imo State.

Attached are some component for ; descriptions are in post below (& more updates will be added on this post latter this month, if possible try revisiting the posts for more updates).

Component C:
It consists of 4 metals, 3 superconductors, & 6 thin junctions (each junction between the metal–superconductor).
The source (power source)'s positive(+) terminal is attached to a connection of metals at both ends; whilst the negative(–) terminal is attached to the superconductor at the middle of the component as shown in the first attached diagram.
In practice, this could result to good applications in electronics/.../engineering systems.

Component D:
It consists of two p-type semiconductors, one n-type semiconductor, & two/bi thin junctions (each junction is between the semiconductors).
The source (power source)'s positive(+) terminal is attached to a connection of p-type semiconductors at both ends; whilst the negative(–) terminal is attached to the n-type semiconductor at the middle of the component as shown in the second attached diagram.
In practice, this could result to good applications in electronics/ICs/imaging/.../engineering systems.

Component E:
It consists of two n-type semiconductors, one p-type semiconductor, & two/bi thin junctions (each junction is between the semiconductors).
The source (power source)'s positive(+) terminal is attached to a connection of n-type semiconductors at both ends; whilst the negative(–) terminal is attached to the p-type semiconductor at the middle of the component as shown in the third attached diagram.
In practice, this could result to good applications in electronics/ICs/imaging/.../engineering systems.

Component F:
It consists of four metal-superconductor junction materials arranged in series-parallel combination form. This is to amplify the (+;-) current with respect to time along the circuit. And also exhibit special electrical properties or effects in some circuitry applications.
The source (power source)'s positive(+) & negative(–) terminals are attached to such component circuit as shown in the fourth attached diagram.
In practice, this could result to good applications in electronics/communication/imaging/.../engineering/power systems.

Component A:
It consists of 3 p-n junction diodes & 1 Schottky diode, arranged in a series-parallel combination configuration.
In practice, this rectifier member might produce a very high + voltage.

T-MOSFET:
In this kind of MOSFET, the source & the substrate/body are both grounded.
A superconductor (copper) is used instead of a metal.
Aluminium Oxide is used as metal oxide instead of Silicon dioxide.
P-type semiconductors are used for source & drain, whilst N-type semiconductor is for substrate/body.

Full Inductor:
The core of a wound coil is cut/gapped sequentially opposite to one another.
These cuts/gaps create strong magnetic fields on the component.
In practice, this could be a special kind of inductor in which its magnetic field is greatly increased.

Component G:
It consists of 3 p-n junction diodes & 1 inductor, arranged in a series-parallel combination configuration, as shown in the schematics below.
In practice, this rectifier member could be negatively induced during voltage supply.

Component B:
It consists of 2 p-n junction diodes & 2 inductors, arranged in a series-parallel combination configuration, so each component is opposite to the other.
This would be an inductive rectifier.

Designed by: Akachi .G.A.
Profession: Graduate Engineer.
Location: Imo State.

Possible 6-phase power circuit, & an angled capacitor.

Read details in the post below.

Fig.1. shows a possible '6-phase (or say 3B-phase electrical power circuit)'.
Each coil of wires is 60° relative to each other coils of wires.
During rotation or change in field, each coil 60° next to the other could produce an intercepting magnetic field, hence resulting to higher electrical power supplied to an electrical load.
In practice, this could be important for electric power transfer (generation, transmission, distribution, consumption/usage).

Fig.2. shows an 'angled (say 45° shift) capacitor'.
Unlike the traditional capacitors, this capacitor is made in such a way that its plates are kept/placed at an angle (say 45°) to its dielectric.
Since the cross sectional area of the plates have changed due to the angle, the charges deposited onto the surfaces of the plates will vary from top to bottom
Hence, higher or variable frequencies can be obtained from such device.
For this device, with respect to time, the capacitance will drop (from high to low) during discharge; & increase (from low to high) during charge.

Designed by: Akachi .G.A.
Profession: Graduate Engineer.
Location: Imo State.

These are reconfigured Josephson Junction (JJ) for 4 different concept-layouts. Each concept represented in the diagrams attached might have unique properties different from one another.

Fig.1. represents the JJ Qubit Circuit Concept A.

Fig.2. represents the JJ Qubit Circuit Concept B.

Fig.3. represents the JJ Qubit Circuit Concept C.

Fig.4. represents the JJ Qubit Circuit Concept D.

Modified/Designed by: Akachi .G.A.
Profession: Graduate Engineer.
Location: Imo State.

::: ( ) :::

Below are attached diagrams & details on new sets/designs of devices for Microelectronics.

Carefully study the diagrams & read through the details below.

Fig.1. shows a new device: Metal-Semiconductor-Metal (M-N-M) Junction.
This device is made by joining two metals at both ends of an n-type semiconductor at conduction band. The ohmic contact on the n-type in the circuit is to improve electrical conductivity of the n-type region.
In practice, this device will have good electrical properties & characteristics for microelectronics. Electricity will be able to operate/flow perfectly within these regions.

Fig.2. shows new device: Semiconductor -Metal (P-M-N) Junction.
This device is made by joining p-type & n-type semiconductors at each ends of a metal, at each conduction band.
In practice, this device will operate in a way that there would be more current flowing to the p-type & metal junction than the junction/contact it makes with the n-type region.
This device will be good for microelectronics.

Fig.3. shows a new device: Semiconductor-Metal (P-M-P) Junction.
This device is made by joining two p-type semiconductors at both ends of a metal, at each conduction band.
This device will have good electrical properties & characteristics for microelectronics.
In practice, there would be equal amount of current flowing through the two junctions/contacts of this device.

Fig.4. shows new device: Light Absorption MOSFET (LAMOSFET).
This device is made by placing a light absorbent metal (Gold) onto a separator/insulator which in turn is on top of p-type semiconductors (source, & drain), onto an n-type substrate/body.
This device can be excited by light/solar energy (at the metal), or by electricity (at source; & drain).
In practice, (blue) light/wavelength is applied/absorbed by the gate medium (metal: Gold); there could lead to an increase in the conductivity of both the source/p-type & drain/p-type.
This device will be good for microchip technology.

Fig.5. shows new device: Metal N-type Semiconductor (MnS).
This device is made by placing a p-type semiconductor onto a separator/insulator which in turn is on top of n-type semiconductors (source, & drain), onto a metal substrate/body.
In practice, this device could lead to higher amplification/or switching.
The device could be used for microchip technology.

Fig.6. shows new device: Metal P-type Semiconductor (MpS).
This device is made by placing an n-type semiconductor with an ohmic contact onto a separator/insulator which in turn is on top of metals (source, & drain), onto a p-type substrate/body.
In practice, this device could lead to higher amplification/or switching.
The device could be used for microchip technology.

Designed by: Akachi .G.A.
Profession: Graduate Engineer.
Location: Imo State.

Tags:

Improved .
Details are below.

Note:
D = Diode.
C = Capacitor.
C(+;-) = Polarized Capacitor.
L = Inductor.
+;- = Power Supply (the power source here could be A.C; hence the diodes).

Fig.1. shows a 'High Powered Laser.'
In practice, this improved Laser Technology (from figure 1's schematics) would result to a higher power/efficiency of Lasers.

Fig.2. shows a 'High Stable Powered Laser.'
In practice, this improved Laser Technology (from figure 2's schematics) would result to a higher stable power/efficiency of Lasers.

Fig.3. shows a 'Low Powered Laser.'
In practice, for some applications, this improved Laser Technology (from figure 3's schematics) would result to a lower power/efficiency of Lasers.

Fig.4. shows a 'Variable Powered Laser.'
In practice, this improved Laser Technology (from figure 4's schematics) would result to a variation in power/efficiency of Lasers.

Designed by: Akachi .G.A.
Profession: Graduate Engineer.
Location: Abia State.

Tags:

Below this post, are attached diagrams for new kind of Circuitry Components design.

Details are as follows:

Fig.1. shows what I would call "N-Metal component."
Two N-type semiconductors are attached onto a metal, with a very thin gap/junction between these semiconductors. The terminals (+;–) are connected to the N-type semiconductors rather than to the metal by an electrical contact.
In practice, this component should be tested under various parameters including current, temperature, ..., voltage.

Fig.2. shows a Metal-Metal Junction component. A substrate/body of Dielectric, which onto it are two metals of the same material (say, Aluminum or Lead) with a thin gap/junction in-between. The terminals(+;–) are connected to the metal plates/materials.
In practice, this component should be tested under various parameters including current, temperature, ..., voltage.

Note, the substrate (dielectric) in fig.2. has a larger surface area than the body (metal) in fig.1.

Both fig.3 & fig.4 shows block diagram & sketch of its own component.

Fig.3. shows a metal capacitor.
It consists of two plates of different metals (here, Lead at + sides; Tantalum at – side).
This will have a better performance for some applications in electronics.
Since both metals have its own range of resistivity; this will change how they store charges on its own surface.

In practice, should be tested under various electrical parameters.

Fig.4. shows a dual capacitor.
This consists of 3 plates & 2 dielectrics. The plates are of the same metal (say, Lead). Only the 1st & 3rd plates are connected to the terminals; whilst the 2nd plate acts as a complement, to improve charge storage & power.

In practice, should be tested under various electrical parameters.

Fig. 5 & Fig. 6 both shows transformer design concepts.

In fig.5; a less conductive material (say, aluminum coil) is wound on the supply (primary) side. Whilst a high conductive material (say, copper coil) is wound on the induced (secondary) side.
Say aluminum coil is 400 turns, then copper coil is 200 turns. This can be done vice versa too.

In fig.6; copper coils are used on both the supply/primary side & the induced/secondary side.
Just that on the secondary/induced side, there are two outputs.
Say at the supply/primary side, copper coil is 400 turns; there would be 200 turns of the copper coils at each outputs on the secondary/induced side.

Fig.7. shows a new kind of inductor.
The coil is wound over a tapered core, such that the coil gauge reduces as it goes down the core's slant or tapered length.
This is a way to bring up a new kind of inductance, where inductance will vary with time.
In practice, this component should be tested under certain electrical parameters.

Fig.8. shows a Metal -Sulphide Semiconductor (MSSFET).
Unlike MOSFETs, here it uses a Metal Sulphide in place of a Metal Oxide, which could increase the performance of these kind of transistors.

In practice, this component should be tested under various parameters/conditions.

Note: my next designs are more on new Circuitry (Integrated Circuit, Transistors, etc) Solutions.

Designed by: Akachi .G.A.
Profession: Graduate Engineer.
Location: Imo State.

Tags:

Below are attached diagrams for 10 ; and another attached diagrams for 2 techniques which when used in practice could improve energy density of a cell/battery.

Details are in the post below.

Fig.1. shows a proposed Lithium-Lithium Cobalt Oxide (Li-LiCoO2) battery cell. A kind of Li-ion battery with some changes.

Chemistry of Li–LiCoO2 Cell:
ANODE(–): Metallic lithium hardened with small amount of carbon. The reason to this, is to prevent corrosion of lithium metal & also increase discharge rate.
CATHODE(+): Lithium Colbalt Oxide.
ELECTROLYTE: Lithium salt dissolved in organic solvent. Since Lithium is reactive with water.
SEPARATOR: Synthetic polymer/fibre/fur. Good separator increases energy storage of the cells.

This form of battery might increase potential, energy density, & reduce weight further.

Fig.2. shows a proposed Cadmium-Manganese dioxide (Cd-MnO2) Cell.

Chemistry of Cd-MnO2 Cell:
ANODE(–): Cadmium powder/or plate.
CATHODE(+): Manganese dioxide.
ELECTROLYTE: Potassium hydroxide. Since Cadmium is less reactive with water.
SEPARATOR: Macro porous material. Good separator increases the energy storage of the cells.

This form of battery might increase energy density, performance, & cell voltage.

Fig.3. shows an upgraded Lead–Acid battery cell. A kind of Pb-Acid battery with a change.

Chemistry of Lead-Acid Cell:
ANODE(–): Lead(Pb).
CATHODE(+): Copper Oxide(CuO). This metal oxide replaces the use of PbO, to improve cell potential.
ELECTROLYTE: Sulfuric Acid (H2SO4). Since both CuO & Pb are less reactive with water.
SEPARATOR: Synthetic polymer/rubber. Good separator increases energy storage of the cells.

This form of battery will increase potential, & reduce weight.

Fig.4. shows an upgraded Lithium (Li)-ion Cell. A kind of Li-ion Cell with some changes.

Chemistry of Li-ion Cell:
ANODE(–): Graphite + small amount of Acetylene Black. To increase intercalating of Li-ions.
CATHODE(+): Lithium Oxido-Oxo-Manganese (LiMn2O4). For cheaper & better cell capacity.
ELECTROLYTE: Lithium salt dissolved in organic solvent.
SEPARATOR: Synthetic polymer/fur. Good separator increases the energy storage of the cells.

This form of battery would increase energy density, & reduce cost.

Fig.5. shows a proposed Zinc Oxido-Oxo-Manganese (Zn-Mn2O4) battery cell.

Chemistry of Zn-Mn2O4 Cell:
ANODE(–): Zinc(Zn).
CATHODE(+): Oxido-Oxo-Manganese(Mn2O4).
ELECTROLYTE: Mixture of Ammonium Chloride & Zinc Chloride, + lesser amount of Mecuric Oxide (as Zinc inhibitor at anode).
SEPARATOR: Treated absorbent paper. Good separator increases energy storage of the cells.

This form of battery would reduce cost, gain higher energy density, & improve cell capacity.

Fig.6. shows a proposed Cadmium-Nickel III Oxide (Cd-Ni) / Cd-Ni2O3 Cell.

Chemistry of Cd-Ni2O3 Cell:
ANODE(–): Cadmium(Cd).
CATHODE(+): Nickel III Oxide(Ni2O3) + small amount of graphite. To increase conductivity.
ELECTROLYTE: Greater amount of Cadmium Chloride + average amount of Ammonium Chloride Solutions. Since Cadmium is less reactive with water.
SEPARATOR: Treated absorbent paper. Good separator increases the energy storage of the cells.

This battery cell might gain higher energy density.

Fig.7. shows a proposed Sodium-Titanium disulphide (Na-Ti2O3) battery cell. A kind of Na-ion battery with some changes.

Chemistry of Na-Ti2O3 Cell:
ANODE(–): Pure Sodium(Na) with small amount of hard carbon. The reason to this, is to prevent corrosion of sodium, to increase conductivity & discharge rate.
CATHODE(+): Sodium Titanium disulphide(NaTi2O3). Metal Sulphides might gain potential more than Metal Oxides for sodium (Na)-ions.
ELECTROLYTE: Sodium salt dissolved in organic solvent. Since Sodium is reactive with water.
SEPARATOR: Synthetic polymer/fur.

This form of battery might increase cell potential, energy density, & reduce weight.

Fig.8. shows a proposed Nickel(Ni)-Acid Cell.

Chemistry of Ni-Acid Cell:
ANODE(–): Nickel(Ni).
CATHODE(+): Nickel Oxide(NiO).
ELECTROLYTE: Sulfuric Acid(H2SO4). Since Nickel is less reactive with water.
SEPARATOR: Synthetic polymer/rubber . Good separator increases the energy storage of the cells.

This form of battery might gain higher cell voltage, & reduce weight a little.

Fig.9. shows an upgraded Zinc Oxido-Oxo-Manganese (Zn-Mn2O4) battery cell.

Chemistry of Zn-Mn2O4 Cell:
ANODE(–): Pure Zinc(Zn).
CATHODE(+): Oxido-Oxo-Manganese(Mn2O4).
ELECTROLYTE: Potassium hydroxide (KOH) .
SEPARATOR: Macro porous material . Good separator increases energy storage of the cells.

This form of battery would increase cost saving, high energy density, etc.

Fig.10. shows a proposed Magnesium-Copper Oxide (Mg-CuO) battery cell.

Chemistry of Mg-CuO Cell:
ANODE(–): Magnesium + small amount of graphite + lesser amount of Acetylene Black. The addition is to increase cell potential, conductivity, & discharge rate.
CATHODE(+): Copper Oxide (CuO).
ELECTROLYTE: Potassium hydroxide . Since Magnesium is reactive with water.
SEPARATOR: Macro porous material . Good separator increases the energy storage of the cells.

This form of battery might reduce weight, gain higher energy density & cell voltage, & improve cell capacity.

So, in a more simpler explanation.
..
Fig.1. shows a proposed Lithium -Lithium Colbalt Oxide (Li-LiCoO2) battery cell.
The chemistry of Li-LiCoO2 Cell: Lithium as anode. This lithium is hardened with small amount of carbon to prevent lithium corrosion & increase discharge rate.
Electrolyte as lithium salt dissolved in organic salt, since Lithium is reactive with water.
Lithium Colbalt Oxide as cathode.
Separator is synthetic polymer/fur.
Separator increases the energy storage of the cells. Hence careful selection are to be made for every type or category of battery cells.

Fig.2. shows a proposed Cd-MnO2 battery cell.
The chemistry of Cd-MnO2 Cell:
Cadmium powder or on a plate (depending on the form/shape of the battery), as anode.
Manganese dioxide as cathode.
Potassium hydroxide as the electrolyte; since Cadmium is less reactive with water.
Macro porous material as separator.

Fig.3. shows an upgraded Lead-Acid battery cell.
The only change in its chemistry, is replacing the Lead Oxide with Copper Oxide to improve cell potential/voltage, & other factors.

Fig.4. shows an upgraded Li-ion battery cell.
The changes in its chemistry are:
Adding small amount of Acetylene Black to Graphite used as anode.
Oxido-Oxo-Manganese(Mn2O4) as cathode, to increase cell capacity, performance, & reduce cost.

Fig.5. shows a proposed Zinc Oxido-Oxo-Manganese (Zn-Mn2O4) battery cell.
The chemistry of Zn-Mn2O4 Cell:
Zinc as anode.
Oxido-Oxo-Manganese (Mn2O4) as cathode.
Mixture of Ammonium Chloride & Zinc Chloride solutions to a ratio of 3:1, as the electrolyte; with lesser amount of a zinc inhibitor to prevent zinc corrosion at anode.
Treated absorbent paper as separator.

Fig.6. shows a proposed Cadmium-Nickel III Oxide (Cd-Ni2O3) battery cell.
The chemistry of Cd-Ni2O3 Cell:
Cadmium as anode.
Nickel III Oxide (as cathode) with small amount of graphite added to it to improve its conductivity.
Mixture of Cadmium Chloride & Ammonium Chloride solutions to a ratio of 3:1 as electrolyte; with lesser amount of Cadmium inhibitor.
Treated absorbent paper as separator.

Fig.7. shows a proposed type of Sodium (Na)-ion battery cell.
The chemistry of this Na-ion Cell:
Pure sodium (as anode) hardened with small amount of hard carbon, to increase conductivity, cell potential, & discharge rate.
Sodium Titanium disulphide (Na-Ti2O3) as cathode. It could be possible that Metal Sulphides will have more potentials than Metal Oxides for Sodium-ions.
Sodium salt dissolved in organic solvent, since Sodium is reactive with water.
Synthetic polymer/fur as separator.

Fig.8. shows a proposed Nickel Acid battery cell.
The chemistry of Ni-Acid Cell:
Nickel as anode.
Nickel Oxide as cathode.
Sulfuric Acid as electrolyte.
Synthetic polymer/rubber as separator.

Fig.9. shows an upgraded Zinc Oxido-Oxo-Manganese (Zn-Mn2O4) battery cell.
The two changes of its chemistry from the previous one mentioned above are:
Potassium hydroxide being used as electrolyte.
And treated absorbent paper being used as the separator.

Fig.10. shows a proposed Magnesium-Copper Oxide (Mg-CuO) battery cell.
The chemistry of Mg-CuO Cell:
Magnesium (as anode) with addition of small amount of graphite plus lesser amount of Acetylene Black. This addition should be in a decreased proportion manner.
Copper Oxide as cathode.
Potassium hydroxide as electrolyte.
Macro porous material as separator.
These of mine if put in practice will revolutionize the energy & other related-sectors.
Increased
- energy density.
- cell potential.
- cell capacity.
& more.

Below is also the last attached image for techniques to possibly improve energy density of batteries.

There are two different techniques shown in the last attached image, which in practice, could improve the energy density of cells/batteries.

Fig.1. shows Full Plates – Half Size Separator Technique.
This technique uses whole or full size metal plates at both anode & cathode ends; & a half size separator (which is placed in the middle of the cathode & anode plates in such a manner they won't touch). This allows the ions/electrolyte flow freely towards each metal plate by taking advantage of the half size of the separator, to improve the energy density of such cell/battery.

Fig.2. shows Half Plates – Full Size Separator Technique.
This technique uses a whole or full size separator; & half size metal plates (which are both placed separately at the middle of the separator). And by increasing the number of cells when using such technique, it could improve the energy density of such cell/battery.

Designed by: Akachi .G.A.
Profession: Graduate Engineer.
Location: Imo State.

Tags:

Below are two attached diagrams, one for possible 6G antenna solution; the other another configuration for 5G antenna solution.
Details on the attached

The second attached diagram below is an integrated 4-B (say, another configuration) channel for 5G antenna solution I designed.
You will notice for each channel, there is one Tx/Rx front end and one phase shifter. And there are one antenna for each one channel. These antennas have their own Tx/Rx switch to them and also one Tx/Rx switch to the beamformer for each channel.

In practical, this configuration/design could maintain constant frequency level whilst improving power level.

Symbols represented are:
T/R = Tx/Rx front end.
(A); (B) = Tx/Rx switch.
VM = Phase shifter.

The first attached diagram below is a possible 6G antenna solution for the future that I designed.
This is a 4×3 6G antenna channel solution.
You will notice for each channel to the beamformer, there is one Tx/Rx switch. And there are separate antennas for each one channel. And these antennas have their own Tx/Rx switch to them but one common Tx/Rx switch to the beamformer for each channel.

In practical this design could increase high efficiency, frequency and power levels.

Symbols represented are:
PA = Tx front end.
LNA = Rx front end.
(A); (B) = Tx/Rx switch.
VM = Phase shifter.

Designed by: Akachi .G.A.
Profession: Graduate Engineer.
Location: Imo State.

Tags: